Reticle critical dimension latitude for fabrication of 0.18 μm line patterns

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 6689-6694

  Matsuura, Seiji ^a   Uchiyama, Takayuki ^a   Fujimoto, Masashi ^a   Yamazaki, Tamio ^a   Hashimoto, Takeo ^a   Kasama, Kunihiko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

ArF lithography; Attenuated phase shift mask; Depth of focus; KrF lithography; Mask linearity; NA; Optical proximity effect; Reticle CD latitude;

Indexed keywords

EID: 0001561158     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6689     Document Type: Article

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