Hydrocarbon reaction with HF-cleaned Si(100) and effects on metal-oxide-semiconductor device quality

Applied Physics Letters

Volumn 59, Issue 1, 1991, Pages 108-110

  Kasi, S R ^a   Liehr, M ^a   Thiry, P A ^a   Dallaporta, H ^a   Offenberg, M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

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EID: 0001544025     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.105560     Document Type: Article

References (19)