SCOPUS 정보 검색 플랫폼

Volumn 88, Issue 2, 2000, Pages 1141-1148

Relation between the suppression of the generation of stacking faults and the mechanism of silicon oxidation during annealing under argon containing oxygen

(1) Suzuki, Toshiharu a

a SONY CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001518768 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.373789 Document Type: Article

Times cited : (9)

References (32)

1
- 0000901940
- B. Hoeneisen and C A. Mead, Solid State Electron. 14, 819 (1972).
- (1972) Solid State Electron. , vol.14 , pp. 819
- Hoeneisen, B.¹ Mead, C.A.²

2
- 3643083747
- Y. Hayashi, Electron. Lett. 11, 25 (1975).
- (1975) Electron. Lett. , vol.11 , pp. 25
- Hayashi, Y.¹

3
- 0039385970
- G. Timp, A. Agarval, F. H. Baumann, T. Boon, M. Buonanno, R. Cirelli, V. Donnelly, M. Foad, D. Grant, M. Green, H. Gossmann, S. Hillenius, J. Jackson, D. Jacobson, R. Kleiman, A. Komblit, F. Klemens, J. T.-C. Lee, W. Mansfield, S. Moccio, A. Murrel, M. O'Malley, J. Rosamilia, J. Sapjeta, P. Silverman, T. Sorsch, W. W. Tai, D. Tennant, H. Vuong, and B. Weir, Tech. Dig. Int. Electron Devices Meet. 930 (1997).
- (1997) Tech. Dig. Int. Electron Devices Meet. , pp. 930
- Timp, G.¹ Agarval, A.² Baumann, F.H.³ Boon, T.⁴ Buonanno, M.⁵ Cirelli, R.⁶ Donnelly, V.⁷ Foad, M.⁸ Grant, D.⁹ Green, M.¹⁰ Gossmann, H.¹¹ Hillenius, S.¹² Jackson, J.¹³ Jacobson, D.¹⁴ Kleiman, R.¹⁵ Komblit, A.¹⁶ Klemens, F.¹⁷ Lee, J.T.-C.¹⁸ Mansfield, W.¹⁹ Moccio, S.²⁰ more..

4
- 4243851884
- C. T. Liu, A. Ghetti, Y. Ma, G. Alers, C. P. Chang, K. P. Cheung, J. I. Colonell, W. Y. C. Lai, C. S. Pai, R. Liu, H. Vaidya, and J. T. Clemens, Tech. Dig. Int. Electron Devices Meet. 85 (1997).
- (1997) Tech. Dig. Int. Electron Devices Meet. , pp. 85
- Liu, C.T.¹ Ghetti, A.² Ma, Y.³ Alers, G.⁴ Chang, C.P.⁵ Cheung, K.P.⁶ Colonell, J.I.⁷ Lai, W.Y.C.⁸ Pai, C.S.⁹ Liu, R.¹⁰ Vaidya, H.¹¹ Clemens, J.T.¹²

5
- 85176699761
- H. Shiraki, K. Kanaya, and A. Ymaguchi, J. Appl. Phys. 66, 5651 (1989).
- (1989) J. Appl. Phys. , vol.66 , pp. 5651
- Shiraki, H.¹ Kanaya, K.² Ymaguchi, A.³

6
- 0020927485
- edited by W. M. Bullis and L. C. Kimberling The Electrochemical Society, Pennington, NJ
- K. Yamabe, K. Taniguchi, and Y. Matsushita, in Proceedings on the Symposium on Defect in Silicon, edited by W. M. Bullis and L. C. Kimberling (The Electrochemical Society, Pennington, NJ, 1983), p. 629.
- (1983) Proceedings on the Symposium on Defect in Silicon , pp. 629
- Yamabe, K.¹ Taniguchi, K.² Matsushita, Y.³

7
- 0018882683
- F. Shimura, H. Tsuya, and T. Kawamura, J. Appl. Phys. 51, 269 (1980).
- (1980) J. Appl. Phys. , vol.51 , pp. 269
- Shimura, F.¹ Tsuya, H.² Kawamura, T.³

8
- 0017971165
- C. Plougonven, B. Leroy, J. Arhan, and A. Lecuiller, J. Appl. Phys. 49, 2711 (1978).
- (1978) J. Appl. Phys. , vol.49 , pp. 2711
- Plougonven, C.¹ Leroy, B.² Arhan, J.³ Lecuiller, A.⁴

9
- 0003111516
- S. Mahajan, G. A. Rozgonyi, and D. Drasen, Appl. Phys. Lett. 30, 73 (1977).
- (1977) Appl. Phys. Lett. , vol.30 , pp. 73
- Mahajan, S.¹ Rozgonyi, G.A.² Drasen, D.³

10
- 0015970235
- K. V. Ravi and C. J. Varker, J. Appl. Phys. 45, 263 (1974).
- (1974) J. Appl. Phys. , vol.45 , pp. 263
- Ravi, K.V.¹ Varker, C.J.²

11
- 0001624755
- A. W. Fisher and J. A. Amick, J. Electrochem. Soc. 113, 1054 (1966).
- (1966) J. Electrochem. Soc. , vol.113 , pp. 1054
- Fisher, A.W.¹ Amick, J.A.²

12
- 0001951840
- S. Kishino, Appl. Phys. Lett. 32, 1 (1978).
- (1978) Appl. Phys. Lett. , vol.32 , pp. 1
- Kishino, S.¹

13
- 0016115313
- H. Shiraki, Jpn. J. Appl. Phys. 13, 1514 (1974).
- (1974) Jpn. J. Appl. Phys. , vol.13 , pp. 1514
- Shiraki, H.¹

14
- 0000461327
- S. P. Murarka, H. J. Levinstein, R. B. Marcus, and R. S. Wagner, J. Appl. Phys. 48, 4001 (1977).
- (1977) J. Appl. Phys. , vol.48 , pp. 4001
- Murarka, S.P.¹ Levinstein, H.J.² Marcus, R.B.³ Wagner, R.S.⁴

15
- 0018004829
- M. Futagami and M. Hamasaki, Jpn. J. Appl. Phys. 17, 1343 (1978).
- (1978) Jpn. J. Appl. Phys. , vol.17 , pp. 1343
- Futagami, M.¹ Hamasaki, M.²

16
- 3643080623
- S. P. Murarka, Phys. Rev. B 16, 2849 (1977).
- (1977) Phys. Rev. B , vol.16 , pp. 2849
- Murarka, S.P.¹

17
- 0017727455
- S. P. Murarka, J. Appl. Phys. 48, 5020 (1977).
- (1977) J. Appl. Phys. , vol.48 , pp. 5020
- Murarka, S.P.¹

18
- 0004578036
- S. M. Hu, Appl. Phys. Lett. 27, 15 (1975).
- (1975) Appl. Phys. Lett. , vol.27 , pp. 15
- Hu, S.M.¹

19
- 0017955888
- S. P. Murarka, J. Appl. Phys. 49, 2513 (1978).
- (1978) J. Appl. Phys. , vol.49 , pp. 2513
- Murarka, S.P.¹

20
- 85037453659
- Fourth Symposium on Silicon Nitride and Si Oxide Thin Insulating Film
- Montreal, Canada, (unpublished)
- T. C. Yang, N. Bhat, and K. C. Saraswat. Fourth Symposium On Silicon Nitride and Si Oxide Thin Insulating Film, 191st Meeting of the Electrochem. Soc., Montreal, Canada, 1997 (unpublished).
- (1997) 191st Meeting of the Electrochem. Soc.
- Yang, T.C.¹ Bhat, N.² Saraswat, K.C.³

21
- 0017517271
- Y. Kamigaki and Y. Itoh, J. Appl. Phys. 48, 2891 (1977).
- (1977) J. Appl. Phys. , vol.48 , pp. 2891
- Kamigaki, Y.¹ Itoh, Y.²

22
- 0023104175
- A. Reisman, E. H. Nicollian, C. K. Williams, and C. J. Merz, J. Electron. Mater. 16, 45 (1987).
- (1987) J. Electron. Mater. , vol.16 , pp. 45
- Reisman, A.¹ Nicollian, E.H.² Williams, C.K.³ Merz, C.J.⁴

23
- 36549098246
- D. Walters and A. T. A. Zegers-van Duynhoven, J. Appl. Phys. 65, 5126 (1989).
- (1989) J. Appl. Phys. , vol.65 , pp. 5126
- Walters, D.¹ Zegers-van Duynhoven, A.T.A.²

24
- 33750652068
- D. Walters and A. T. A. Zegers-van Duynhoven, J. Appl. Phys. 65, 5134 (1989).
- (1989) J. Appl. Phys. , vol.65 , pp. 5134
- Walters, D.¹ Zegers-van Duynhoven, A.T.A.²

25
- 1642621158
- B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965).
- (1965) J. Appl. Phys. , vol.36 , pp. 3770
- Deal, B.E.¹ Grove, A.S.²

26
- 0005761335
- N. Cabrera and N. F. Mott, Rep. Prog. Phys. 12, 163 (1948).
- (1948) Rep. Prog. Phys. , vol.12 , pp. 163
- Cabrera, N.¹ Mott, N.F.²

27
- 0017417657
- S. P. Murarka and G. Quintana, J. Appl. Phys. 48, 46 (1977).
- (1977) J. Appl. Phys. , vol.48 , pp. 46
- Murarka, S.P.¹ Quintana, G.²

28
- 0001596092
- K. Taniguchi, Y. Shibata, and C. Hamaguchi, J. Appl. Phys. 65, 2723 (1989).
- (1989) J. Appl. Phys. , vol.65 , pp. 2723
- Taniguchi, K.¹ Shibata, Y.² Hamaguchi, C.³

29
- 0026256158
- W. B. Rogers and H. Z. Massoud, J. Electrochem. Soc. 138, 3483 (1991).
- (1991) J. Electrochem. Soc. , vol.138 , pp. 3483
- Rogers, W.B.¹ Massoud, H.Z.²

30
- 0000083625
- A. M. Agarwal and S. T. Dunham, J. Appl. Phys. 78, 5313 (1995).
- (1995) J. Appl. Phys. , vol.78 , pp. 5313
- Agarwal, A.M.¹ Dunham, S.T.²

31
- 33746378574
- G. K. Celler and L. E. Trimple, Appl. Phys. Lett. 54, 1427 (1989).
- (1989) Appl. Phys. Lett. , vol.54 , pp. 1427
- Celler, G.K.¹ Trimple, L.E.²

32
- 0012740947
- Chemical Rubber, Boca Raton, FL
- R. C. Weast, Handbook of Chemistry and Physics (Chemical Rubber, Boca Raton, FL, 1980), Vol. 61, p.E. 69.
- (1980) Handbook of Chemistry and Physics , vol.61
- Weast, R.C.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.