Electronic structure of a-Si1-xNx:H and a-Ge1-xNx:H

Physical Review B

Volumn 41, Issue 9, 1990, Pages 5857-5870

  Makler, S S ^a   Martins Da Rocha, G ^a   Anda, E V ^a  

^a FLUMINENSE FEDERAL UNIVERSITY   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001510994     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.41.5857     Document Type: Article

References (80)

1. Optical properties of non-stoichiometric germanium nitride compounds (a-GeNx)
2. Defects and recombination in a-Si1−xCx:H films
3. Electronic and structural properties of plasma-deposited a-Si:O:H - The story of O2
4. Defect states in a-Si1−xGex:H studied by electron spin resonance
5. Photoluminescence of doped and undoped amorphous Si/Ge alloys
6. Simulation of the atomic arrangements in amorphous silicon and germanium
7. On the theory of cooperative phenomena in crystals
8. Electronic structure, defect states, and optical absorption of amorphousSi1−xNx[0≤x/(1-x)≤2]
9. Disordered alloys with a Bethe lattice structure: a study of a new mean-field approximation
10. Electronic Properties of Amorphous Semiconductors. Lattice Topology Effects
11. Statistical Theory of Superlattices
12. Localization of Eigenstates and Transport Phenomena in the One-Dimensional Disordered System
13. Ergodicity and density of states in a 1D crystal
14. Spectrum of anN-state tight-binding Hamiltonian in a Bethe lattice
15. Theory of off-center impurities in silicon: Substitutional nitrogen and oxygen