Analytic representation of the silicon absorption coefficient in the indirect transition region

Applied Optics

Volumn 27, Issue 18, 1988, Pages 3777-3779

  Geist, Jon ^a   Migdal, Alan ^a   Baltes, Henry P ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF ALBERTA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001502281     PISSN: 1559128X     EISSN: 21553165     Source Type: Journal    
DOI: 10.1364/AO.27.003777     Document Type: Letter

References (7)

1. K. Rajkanan, R. Singh, and J. Shewchun, “Absorption Coefficient of Silicon for Solar Cell Calculations,” Solid-State Electron. 22, 793 (1979).
2. J. M. Palmer, “Near-Infrared Limitations to Silicon Photodetector Self-Calibration,” Proc. Soc. Photo-Opt. Instrum. Eng. 499, 7 (1984).
3. H. A. Weakliem and D. Redfield, “Temperature Dependence of the Optical Properties of Silicon,” J. Appl. Phys. 50, 1491 (1979); personal communication.
4. T. P. McLean, “The Absorption Edge Spectrum of Semiconductors,” Prog. Semicond. 5, 53 (1960).
5. T. P. McLean, “The Absorption Edge Spectrum of Semiconductors,” Prog. Semicond. 5, 99 (1960).
6. G. G. Macfarlane, T. P. McLean, J. E. Quarrington, and V. Roberts, “Fine Structure in the Absorption-Edge Spectrum of Si,” Phys. Rev. 111, 1245 (1958).
7. G. G. Macfarlane, T. P. McLean, J. E. Quarrington, and V. Roberts, “Exiton and Phonon Effects in the Absorption Spectra of Germanium and Silicon,” J. Phys. Chem. Solids 8, 388 (1959).