Exciton in front of a metallic mirror

Solid State Communications

Volumn 108, Issue 4, 1998, Pages 193-197

  Benoit A La Guillaume C ^a   Combescot, M ^a   Betbeder Matibet, O ^a  

^a UNIVERSITÉ PARIS DESCARTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; ELECTRONIC DENSITY OF STATES; EXCITONS; SEMICONDUCTOR QUANTUM WELLS;

BOHR RADIUS; METALLIC MIRROR;

BINDING ENERGY;

EID: 0001498657     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00351-2     Document Type: Article

References (6)

1. See e.g. Bastard, G., Wave mechanics applied to semiconductor heterostructures. Les Editions de Physique, Les Ulis, 1988.
2. Tran Thoai, D.B., Zimmermann, R., Grundmann, M. and Bimberg, D., Phys. Rev., B42, 1990, 5906.
3. Kulik, L.V., Kulakovskii, V.D., Bayer, M., Forchel, A., Gippius, N.A. and Tikhodeev, S.G., Phys. Rev., B54, 1996, 1.
4. The condition for such a rapid readjustment is a plasma frequency (of the order of a few eV in usual metals) much larger than the exciton energy (of the order of a few tenth of meV).
5. r, assumption which is reasonably good in usual quantum well structures.
6. Landau, L.D. and Lifchitz, E.M., Quantum mechanics, chap. VI. Pergamon Press, Oxford, 1965.