SCOPUS 정보 검색 플랫폼

Volumn 6, Issue 1-4, 1995, Pages 15-22

Ferroelectric gate transistors

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001494177 PISSN: 10584587 EISSN: 16078489 Source Type: Journal
DOI: 10.1080/10584589508019350 Document Type: Article

Times cited : (21)

References (8)

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- Buhay, H.¹ Sinharoy, S.² Lampe, D.R.³ Adams, D.A.⁴ Francombe, M.H.⁵

4
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- Rost, T.A.¹ Lin, H.² Rabson, T.A.³

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- R. C. Baumann. T. A. Rost. and T. A. Rabson. Mat. Res. Soc. Proc., 200, 31, (1990).
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- Baumann, R.C.¹ Rost, T.A.² Rabson, T.A.³

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- C.H.-J. Huang, and T. A. Rabson. Elec. Dev Lett., 13, 609, (1992).
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8
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- S. L. Miller and P. J. McWhorter. J. Addl. Phys., 72. 5999. (1992).
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- Miller, S.L.¹ McWhorter, P.J.²

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