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Physical Review B

Volumn 37, Issue 9, 1988, Pages 4609-4617

Raman-scattering depth profile of the structure of ion-implanted GaAs

(4) Holtz, M a Zallen, R a Brafman, O a Matteson, S b

a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY (United States)

b TEXAS INSTRUMENTS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001486051 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.37.4609 Document Type: Article

Times cited : (76)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.