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Volumn 58, Issue 8, 1998, Pages 5043-5051

Valence-band structure of epitaxially grown films

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Indexed keywords


EID: 0001473835     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.5043     Document Type: Article
Times cited : (43)

References (50)
  • 9
    • 0019055399 scopus 로고
    • the other articles in the same series
    • N. F. Mott, Philos. Mag. B 42, 327 (1980), and the other articles in the same series.
    • (1980) Philos. Mag. B , vol.42 , pp. 327
    • Mott, N.1
  • 44
    • 0347064953 scopus 로고
    • It should, however, be pointed out that the local-density approximation (LDA) within the density-functional formalism is known to underestimate the optical band gap for many systems including transition metal oxides [see, e.g., O. K. Andersen, H. L. Skriver, and H. Nohl, Pure Appl. Chem. 52, 93 (1979)]. It is generally recognized that one would need to go beyond the LDA in order to obtain a correct band gap and correct conduction-band energies [see, e.g.
    • (1979) Pure Appl. Chem. , vol.52 , pp. 93
    • Andersen, O.1    Skriver, H.2    Nohl, H.3
  • 47
    • 36549100820 scopus 로고
    • For a review, see, L. C. Davis, J. Appl. Phys. 59, R25 (1986).
    • (1986) J. Appl. Phys. , vol.59 , pp. R25
    • Davis, L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.