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Volumn 65, Issue 7, 1994, Pages 895-897

Electrical properties of oxides grown on strained SiGe layer at low temperatures in a microwave oxygen plasma

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EID: 0001457607     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.112193     Document Type: Article
Times cited : (51)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.