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Applied Physics Letters
Volumn 65, Issue 7, 1994, Pages 895-897
Electrical properties of oxides grown on strained SiGe layer at low temperatures in a microwave oxygen plasma
(5)
Mukhopadhyay, M
a
Ray, S K
a
Maiti, C K
a
Nayak, D K
b
Shiraki, Y
b
a
INDIAN INSTITUTE OF TECHNOLOGY
(
India
)
b
UNIVERSITY OF TOKYO
(
Japan
)
Author keywords
[No Author keywords available]
Indexed keywords
EID
:
0001457607
PISSN
:
00036951
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1063/1.112193
Document Type
:
Article
Times cited : (
51
)
References (
22
)
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