메뉴 건너뛰기




Volumn 71, Issue 19, 1993, Pages 3198-3201

Collective transport in arrays of small metallic dots

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001454515     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.71.3198     Document Type: Article
Times cited : (386)

References (28)
  • 1
    • 84931516029 scopus 로고    scopus 로고
    • For reviews, see Charge Density Waves in Solids, edited by L. P. Gorkov and G. Grüner (Elsevier, Amsterdam, 1989).
  • 12
    • 84931516021 scopus 로고    scopus 로고
    • Also in constrast with the hopping regime, the disorder in our model does not lead to a broad range of hopping rates and hence sample to sample fluctuations are less evident.
  • 14
    • 84931516020 scopus 로고    scopus 로고
    • For small capacitance and high resistance junctions, the effects of small finite temperatures and of cotunneling, in which electrons tunnel coherently through two barriers, are minimal D. V. Averin and Yu. V. Nazarov, in Single Charge Tunneling, Ref. 8
  • 15
    • 84931516023 scopus 로고    scopus 로고
    • A ``no passing'' rule for the integrated current through the junctions can be used to show that, at fixed voltage, each initial state has the same average velocity at long times;
  • 25
    • 84931516024 scopus 로고    scopus 로고
    • Ref. 3
  • 26
    • 84931516027 scopus 로고    scopus 로고
    • We cite results here for a square N×N array. For an anisotropic array, with a linear distance between the leads of M and width N, the fluctuations in the threshold voltage scale as N1/2, for MN-2/3 ll 1. This method can also be applied to CDW models: Numerically, the interface width is constant, reflecting elastic behavior, but the average velocity has t-d/2 fluctuations, leading to the known value νT = 2/d, Ref. 2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.