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Volumn 50, Issue 7, 1994, Pages 4561-4570

Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors

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Indexed keywords


EID: 0001453511     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.50.4561     Document Type: Article
Times cited : (397)

References (40)
  • 13
    • 84927493375 scopus 로고    scopus 로고
    • Scanning Tunneling Microscopy, edited by J. A. Stroscio and W. J. Kaiser, Methods of Experimental Physics Vol. 27 (Academic, Boston, 1993), Chap. 4. There is a sign error in Eq. (17) of this work; the right-hand side should read + a | V |.
  • 14
    • 84927499814 scopus 로고    scopus 로고
    • R. M. Feenstra, in Proceedings of the 21st International Conference on the Physics of Semiconductors, edited by P. Jiang and H.-Z. Zheng (World Scientific, Singapore, 1992), Vol. 1, p. 357.
  • 17
    • 84927493310 scopus 로고    scopus 로고
    • it should read 6.2 times 10-6.
  • 18
    • 84927481977 scopus 로고    scopus 로고
    • Field Emission and Field Ionization (Ref. 16).
    • Gomer, R.1
  • 21
    • 84927470229 scopus 로고    scopus 로고
    • We apply Eq. (19) of Ref. 13, and compute κ = - ( partial I / partial s |V) / ( 2 I ).
  • 39
    • 84927468138 scopus 로고    scopus 로고
    • The transmission probability is defined as the ratio of surface wave functions with and without band bending, computed in a 1D approximation using those values of the 3D potential lying along the cylindrical symmetry axis of tip and sample, and assuming an effective mass of 0.1.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.