High pressure X-ray absorption and diffraction study of inas

High Pressure Research

Volumn 22, Issue 2, 2002, Pages 331-335

  Pascarelli, S ^a   Aquilanti, G ^a   Crichton, W ^a   Le Bihan, T ^a   De Panfilis, S ^b   Fabiani, E ^b   Mezouar, M ^a   Itie, J P ^c   Polian, A ^c  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b UNIVERSITY OF CAMERINO   (Italy)

^c SORBONNE UNIVERSITÉ   (France)

Author keywords

High pressure; III V semiconductors; Phase stability; X ray absorption; X ray diffraction

Indexed keywords

DATA REDUCTION; ENVIRONMENTAL IMPACT; HIGH PRESSURE EFFECTS; LIGHT ABSORPTION; MOLECULAR STRUCTURE; PHASE TRANSITIONS; X RAY DIFFRACTION ANALYSIS;

HIGH PRESSURE; III-V SEMICONDUCTORS; PHASE STABILITY; X-RAY ABSORPTION;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0001442554     PISSN: 08957959     EISSN: None     Source Type: Journal    
DOI: 10.1080/08957950212813     Document Type: Article

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