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Volumn 130, Issue 3, 1997, Pages 417-420

Formation of the digallium compound [(H5C6)2N3](R)Ga-Ga(R)[N 3(C6H5)2] with two bis(trimethylsilyl)methyl groups and two terminal chelating diphenyltriazenido ligands

Author keywords

Gallium; Gallium gallium bond; Low valent compounds; Terminal triphenyltriazenido ligand

Indexed keywords


EID: 0001423666     PISSN: 00092940     EISSN: None     Source Type: Journal    
DOI: 10.1002/cber.19971300317     Document Type: Article
Times cited : (29)

References (34)
  • 32
    • 0004150157 scopus 로고
    • Siemens Analytical X-RAY Instruments Inc., Madison, USA
    • SHELXTL PLUS REL. 4.1, Siemens Analytical X-RAY Instruments Inc., Madison, USA, 1990;
    • (1990) SHELXTL plus REL. 4.1
  • 34
    • 33745360542 scopus 로고    scopus 로고
    • Further details of the crystal structure determinations are available from the Fachinformationszentrum Karlsruhe, D-76344 Eggenstein-Leopoldshafen (Germany), on quoting the depository numbers CSD-406164 (2) and -406163 (3).
    • [is] Further details of the crystal structure determinations are available from the Fachinformationszentrum Karlsruhe, D-76344 Eggenstein-Leopoldshafen (Germany), on quoting the depository numbers CSD-406164 (2) and -406163 (3).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.