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Physical Review B

Volumn 49, Issue 4, 1994, Pages 2469-2476

Aligned defect complex containing carbon and hydrogen in as-grown GaAs epitaxial layers

(5) Cheng, Ying a Stavola, Michael a Abernathy, C R b Pearton, S J b Hobson, W S b

a LEHIGH UNIVERSITY (United States)

b LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001421243 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.49.2469 Document Type: Article

Times cited : (35)

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