Dephasing processes in self-organized strained InGaAs single-dots on (311)B-GaAs substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 SUPPL. B, 1997, Pages 4194-4198

  Kamada, Hidehiko ^a   Temmyo, Jiro ^b   Notomi, Masaya ^b   Furuta, Tomofumi ^c   Tamamura, Toshiaki ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b Opto electronics Laboratories   (Japan)

^c NTT CORPORATION   (Japan)

Author keywords

Broadening; Dephasong; Photoluminescence; Quantum dot; Strain

Indexed keywords

EID: 0001415778     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4194     Document Type: Article

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