A new approach to In2O3 layers from the single-source precursors [Et2 InOH · Et2 InNH2] and [iPr2InOH · iPr2InNH2]

Chemical Vapor Deposition

Volumn 7, Issue 3, 2001, Pages 105-109

  Lobinger, Peter ^a   Park, Hyung S ^a   Hohmeister, Holger ^a   Roesky, H W ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

Displays; In2O3; MOCVD; Single source precursors; Transparent conductive oxide

Indexed keywords

EID: 0001399589     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3862(200105)7:3<105::AID-CVDE105>3.0.CO;2-J     Document Type: Article

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