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Volumn 57, Issue 16, 1998, Pages 10157-10165

Preroughening, fractional-layer occupancies, and phase separation at a disordered flat metal surface

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Indexed keywords


EID: 0001385547     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.10157     Document Type: Article
Times cited : (6)

References (43)
  • 32
    • 3342936903 scopus 로고
    • A notable exception is an ab initio simulation of Ge(111), where preroughening has been suggested to take place in correspondence with melting and metallization of the first bilayer. See N. Takeuchi, A. Selloni, and E. Tosatti, Phys. Rev. Lett. 72, 2227 (1994).
    • (1994) Phys. Rev. Lett. , vol.72 , pp. 2227
    • Takeuchi, N.1    Selloni, A.2    Tosatti, E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.