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Physical Review B

Volumn 41, Issue 12, 1990, Pages 8477-8484

Hopping transport in -doping layers in GaAs

(5) Ye, Qiu Yi a Shklovskii, B I a Zrenner, A a Koch, F a Ploog, K b

a TECHNICAL UNIVERSITY OF MUNICH (Germany)

b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001384413 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.41.8477 Document Type: Article

Times cited : (70)

References (24)

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- J. L. Robert, A. Raymond, J. Y. Mulot, and C. Bousequet, Gallium Arsenide and and Related compounds, 1987, Inst. Phys. Conf. Ser. No. 91 (IOP, Bristol, 1987), p. 585.

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- Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructures
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- Qiu-yi Ye
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- E. I. Laiko, A. O. Orlov, A. K. Savchenko, E. A. Ilyichev, and E. A. Poltoratsky, Zh. Eksp. Teor. Fiz. 93, 2204
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- Phys. Rev. B (to be published).
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- Yi-ben Xia, E.Bangert and
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- Appl. Phys. Lett. (to be published).
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- Qiu-yi Ye, Doctoral thesis, Technical University of Munich, 1989.

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- See, for example, B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors, Ref. 1, pp. 168–189.

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- Entin-Wholman, O.¹ Sivan, U.² Imry, Y.³

24
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- edited by, M. Pollak, B. I. Shklovskii, North-Holland, Amsterdam
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.