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Volumn 50, Issue 20, 1994, Pages 14867-14880

Electronic states of photocarriers in porous silicon studied by photomodulated infrared spectroscopy

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[No Author keywords available]

Indexed keywords


EID: 0001348828     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.50.14867     Document Type: Article
Times cited : (48)

References (55)
  • 28
    • 84927465056 scopus 로고    scopus 로고
    • Recipe adapted from A. Halimaoui and L. T. Canham (private communication).
  • 46
    • 0001731487 scopus 로고
    • This exact correspondence may appear surprising, since the value of the porous silicon refractive index has been estimated using the Bruggeman effective-medium approximation, in which the silicon contribution has been evaluated with the value of the bulk silicon dielectric constant. However, a somewhat lower value might be more relevant, due to quantum confinement effects, as discussed in
    • (1992) Phys. Rev. B , vol.45 , pp. 14150
    • Babić, D.1    Tsu, R.2    Greene, R.F.3
  • 49
    • 84927499298 scopus 로고    scopus 로고
    • As a matter of fact, the free-carrier contribution to the infrared absorption in bulk silicon is itself the sum of an actual Drude contribution (which follows a power law of the wavelength in our spectral range), and of a small Gaussian-like contribution arising from interband transitions between the silicon conduction band and an upper band ( Δ1-> Δ 2prime); see, e.g., Ref. 33 and references therein.
  • 54
    • 84927492969 scopus 로고    scopus 로고
    • M. I. J. Beale (private communication); P. D. J. Calcott, K. J. Nash, L. T. Canham, M. J. Kane, and D. Brumhead, in Microcrystalline Semiconductors: Materials Science and Devices (Ref. 13), p. 143.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.