Effect of surface roughness on the secondary ion yield in ion sputtering

Applied Physics Letters

Volumn 73, Issue 10, 1998, Pages 1445-1447

  Makeev, Maxim A ^a   Barabási, Albert László ^a  

^a UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001309608     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122170     Document Type: Article

References (26)

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22. 0).
23. 2=1/4 are chosen in such a way as to obtain an anisotropic energy distribution (Ref. 1).
24. The same mechanism for yield modifications has been discussed by Sigmund (Ref. 14) and was used to describe the secondary ion yield changes on rippled interfaces (Refs. 16 and 21).
25. K. Wittmaak, J. Vac. Sci. Technol. A 8, 2246 (1990).
26. Note that a similar quadratic dependence on the width appears for yield changes on rippled interfaces (Ref. 16).