Application of analytical TEM for failure analysis of semiconductor device structures

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1747-1751

  Engelmann, H J ^a   Saage, H ^a   Zschech, E ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001293882     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00107-4     Document Type: Article

References (4)

1. Russ, J.C. Fundamentals of Energy Dispersive X-ray Analysis. Butterworth, Boston, 1984
2. Williams, D.B., Carter, C.B. Transm. Electr. Micr. Plenum Press, New York, London, 1996
3. Egerton, R.F. Electron Energy-Loss Spectros-copy. Plenum Press, New York, London, 1996
4. Engelmann, H.J., Volkmann, B., Zschech, E. to be published in Praktische Metallographie'