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Volumn 44, Issue 1-3, 1997, Pages 164-167

Ellipsometry as a powerful tool for the control of epitaxial semiconductor structures in-situ and ex-situ

(8) Svitashev, K K a Shvets, V A a Mardezhov, A S a Dvoretsky, S A a Sidorov, Yu G a Mikhailov, N N a Spesivtsev, E V a Rychlitsky, S V a

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

Author keywords

Ellipsometry; Semiconductor structures; Thin films

Indexed keywords

DEPOSITION; ELLIPSOMETRY; FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TEMPERATURE MEASUREMENT; THIN FILMS;

SCANNING SPECTROSCOPIC ELLIPSOMETRY;

HETEROJUNCTIONS;

EID: 0001293578 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(96)01741-2 Document Type: Article

Times cited : (15)

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