The potential dependence of silicon anisotropic etching in KOH at 60°c

Journal of Electroanalytical Chemistry

Volumn 238, Issue 1-2, 1987, Pages 103-113

  Smith, R L ^a   Kloeck, B ^b   De Rooij, N ^b   Collins, S D ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001267425     PISSN: 00220728     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0728(87)85168-9     Document Type: Article

References (18)

1. Anisotropic etching of silicon
2. Fabrication of novel three-dimensional microstructures by the anisotropic etching of
3. Sodium Hydroxide Solution Shows Selective Etching of Boron-Doped Silicon
4. Electrochemically Controlled Thinning of Silicon
5. An electrochemical P-N junction etch-stop for the formation of silicon microstructures
6. Kinetics of Thermal Growth of Ultra-Thin Layers of SiO[sub 2] on Silicon
7. Anodic Formation of Oxide Films on Silicon