Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 77, Issue 2, 2000, Pages 271-273

  Yang, Q ^a   Scott, D S ^a   Chung, T ^a   Stillman, G E ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001246261     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126947     Document Type: Article

References (11)

1. B. T. Cunningham, L. J. Guido, J. E. Baker, J. S. Major, N. Holonyak, Jr., and G. E. Stillman, Appl. Phys. Lett. 55, 687 (1989).
2. M. Konagai, T. Yamada, T. Akatsuka, K. Satio, E. Tokumitsu, and Takahashi, J. Cryst. Growth 98, 167 (1989).
3. P. M. Enquist, Appl. Phys. Lett. 57, 2348 (1990).
4. J. Shrakashi, T. Yamada, M. Qi, S. Nozaki, K. Takahashi, E. Tokumitsu, and M. Konagai, Jpn. J. Appl. Phys., Part 1 30, 1609 (1991).
5. B. T. Cunningham, G. S. Jackson, and G. E. Stillman, Appl. Phys. Lett. 56, 361 (1990).
6. C. R. Abernathy, S. J. Pearton, R. Caruso, F. Ren, and J. Kovalchik, Appl. Phys. Lett. 55, 1750 (1989).
7. M. C. Hana and A. Majerfield, Appl. Phys. Lett. 59, 2001 (1991).
8. C. R. Abernathy, S. J. Pearton, M. O. Manasreh, D. W. Fisher, and D. N. Talwar, Appl. Phys. Lett. 57, 294 (1990).
9. G. E. Hoefler, H. J. Hoefler, N. Holonyak, Jr., and K. C. Hsieh, J. Appl. Phys. 72, 5318 (1992).
10. Q. Yang, D. Scott, J. Miller, P. Meyer, H. C. Kuo, J. E. Baker, and G. E. Stillman, Appl. Phys. Lett. 74, 2993 (1999).
11. Q. Yang, D. Scott, T. Chung, and G. E. Stillman, J. Electron. Mater. 29, 75 (2000).