Doping interface dipoles: Tunable heterojunction barrier heights and band-edge discontinuities by molecular beam epitaxy

Applied Physics Letters

Volumn 46, Issue 7, 1985, Pages 664-666

  Capasso, Federico ^a   Cho, Alfred Y ^a   Mohammed, Khalid ^a   Foy, Philip W ^a  

^a LUCENT TECHNOLOGIES   (United States)

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Indexed keywords

EID: 0001243517     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.95521     Document Type: Article

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