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Volumn 19, Issue 12, 1979, Pages 6433-6441
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Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperatures
a b,c |
Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0001240061
PISSN: 01631829
EISSN: None
Source Type: Journal
DOI: 10.1103/PhysRevB.19.6433 Document Type: Article |
Times cited : (152)
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References (29)
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