The use of bismuth(III) dithiocarbamato complexes as precursors for the low-pressure MOCVD of Bi2S3

Chemical Vapor Deposition

Volumn 6, Issue 5, 2000, Pages 230-232

  Monteiro, Olinda C ^a   Trindade, Tito ^a   Park, Jin H ^b   O'Brien, Paul ^b  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001214895     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3862(200010)6:5<230::AID-CVDE230>3.0.CO;2-P     Document Type: Article

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