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Journal of Applied Physics

Volumn 81, Issue 4, 1997, Pages 1700-1703

SiGeC alloy layer formation by high-dose C+ implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100)

(6) Im, S c Song, J H a,c Lie, D Y C b,c Eisen, F c Atwater, H c Nicolet, M A c

a Korea Institute of Science and Technology (South Korea)

b Rockwell International (United States)

c CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001213388 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.364027 Document Type: Article

Times cited : (4)

References (17)

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