In-situ control during molecular beam epitaxy: Impurity incorporation and dissimilar materials epitaxial growth

Materials Science and Engineering: B

Volumn 75, Issue 2-3, 2000, Pages 157-165

  Daweritz L ^a   Wang, Z M ^a   Schippan, F ^a   Trampert, A ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

MnAs; Molecular beam epitaxy; Reflectance difference spectroscopy; Reflection high energy electron diffraction; Si doping; Surface structure GaAs

Indexed keywords

EID: 0001209535     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00353-6     Document Type: Article

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