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Volumn 62, Issue 8, 2000, Pages 5055-5058

Effects of indium concentration on the electronic structures of Be acceptors confined in quantum-well structures

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Indexed keywords


EID: 0001191608     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.62.5055     Document Type: Article
Times cited : (5)

References (24)
  • 16
  • 21
    • 17144405543 scopus 로고
    • Proceeding of the 20th International Conference on the Physics of Semiconductors (World Scientific, Singapore, 1990), Vol. 2, p. 1404
    • J. P. Loehr, Y. C. Chen, D. Biswas, P. K. Bhattacharya, and J. Singh, Appl. Phys. Lett. 57, 180 (1990);Proceeding of the 20th International Conference on the Physics of Semiconductors (World Scientific, Singapore, 1990), Vol. 2, p. 1404.
    • (1990) Appl. Phys. Lett. , vol.57 , pp. 180
    • Loehr, J.1    Chen, Y.2    Biswas, D.3    Bhattacharya, P.4    Singh, J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.