Scanning tunneling microscopy investigation of the dimer vacancy-dimer vacancy interaction on the Si(001) 2×n surface

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 2, 1996, Pages 909-913

  Smith, A R ^a   Men, F K ^a,d   Chao, K J ^a   Zhang, Zhenyu ^b,c   Shih, C K ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

^d NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001175674     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589173     Document Type: Article

References (25)

1. R. Schlier and H. Farnsworth, J. Chem. Phys. 30, 917 (1959).
2. R. M. Tromp, R. J. Hamers, and J. E. Demuth, Phys. Rev. Lett. 55, 1303 (1985).
3. T. Tabata, T. Aruga, and Y. Murata, Surf. Sci. 179, L63 (1987).
4. R. A. Wolkow, Phys. Rev. Lett. 68, 2636 (1992).
5. J. Wang, T. A. Arias, and J. D. Joannopoulos, Phys. Rev. B 47, 10497 (1993).
6. B. S. Swartzentruber, Y. W. Mo, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Technol. A 7, 2901 (1989).
7. K. Müller, E. Lang, L. Hammer, W. Grimm, P. Heilman, and K. Heinz, in Determination of Surface Structure by LEED, edited by P. M. Marcus and F. Jona (Plenum, New York, 1984), p. 483.
8. K. Kato, T. Ide, S. Miura, A. Tamura, and T. Ichinokawa, Surf. Sci. 194, L87 (1988).
9. H. Niehus, U. K. Köhler, M. Copel, and J. E. Demuth, J. Microscopy 152, 735 (1988).
10. E. G. McRae, R. A. Malic, and D. A. Kapilow, Rev. Sci. Instrum. 56, 2077 (1985).
11. J. A. Martin, D. E. Savage, W. Moritz, and M. G. Lagally, Phys. Rev. Lett. 56, 1936 (1986).
12. T. Aruga and Y. Murata, Phys. Rev. B 34, 5654 (1986).
13. K. E. Johnson, P. K. Wu, M. Sander, and T. Engel, Surf. Sci. 290, 213 (1993).
14. H. J. W. Zandvliet, H. B. Elswijk, E. J. van Loenen, and I. S. T. Tsong, Phys. Rev. B 46, 7581 (1992).
15. H. Feil, H. J. W. Zandvliet, M.-H. Tsai, J. D. Dow, and I. S. T. Tsong, Phys. Rev. Lett. 69, 3076 (1992).
16. D. M. Rohlfing, J. Ellis, B. J. Hinch, W. Allison, and R. F. Willis, Surf. Sci. 207, L955 (1989).
17. A. E. Dolbak, B. Z. Olshanetsky, S. I. Stenin, S. A. Teys, and T. A. Gavrilova, Surf. Sci. 247, 32 (1991).
18. For comparison, the subsurface Ni atoms should be included as part of the total Ni concentration since these Ni atoms may also contribute to the formation of the 2×n structure. Assuming a uniform Ni concentration for every atom layer and an electron inelastic mean free path of 10 A, we have estimated the total number of Ni atoms in the first ten atom layers. This number is still a factor of 4 smaller than that of one Ni atom per unit cell for n=10.
19. D. J. Chadi, Phys. Rev. Lett. 59, 1691 (1987).
20. Here we adopt the notations used by Wang et al. in Ref. 9.
21. K. C. Pandey, in Proceedings of the 17th International Conference on the Physics of Semiconductors, edited by J. D. Chadi and W. A. Harrison (Springer, New York, 1985), p. 55.
22. J. Tersoff, Phys. Rev. B 45, 8833 (1992).
23. Ch. Park, R. Z. Bakhtizin, T. Hashizume, and T. Sakurai, J. Vac. Sci. Technol. B 12, 2049 (1994).
24. X. Chen, F. Wu, Z. Zhang, and M. G. Lagally, Phys. Rev. Lett. 73, 850 (1994).
25. A. R. Smith and C. K. Shih, Rev. Sci. Instrum. 66, 2499 (1995).