Large-area microwave and radiofrequency plasma etching of polymers

Plasma Chemistry and Plasma Processing

Volumn 8, Issue 3, 1988, Pages 315-329

  Wrobel, A M ^a   Lamontagne, B ^a   Wertheimer, M R ^a  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

effect of structure; microwave; Plasma etching; polymers; radiofrequency

Indexed keywords

EID: 0001173087     PISSN: 02724324     EISSN: 15728986     Source Type: Journal    
DOI: 10.1007/BF01020409     Document Type: Article

References (19)

1. Comparison of microwave and lower frequency plasmas for thin film deposition and etching
2. Decapsulation and Photoresist Stripping in Oxygen Microwave Plasmas
3. Plasma etching of organic materials. I. Polyimide in O2–CF4
4. Summary Abstract: Polyimide etching and passivation downstream of an O2–CF4–Ar microwave plasma
5. Relation of polymer structure to plasma etching behavior: Role of atomic fluorine
6. Electrostatic probe analysis of microwave plasmas used for polymer etching