Thermodynamic analysis of metalorganic chemical vapour deposition of SiC using tetramethylsilane as precursor. I. Identification of the main reactions

Journal of Crystal Growth

Volumn 148, Issue 4, 1995, Pages 383-389

  Veintemillas, S ^a   Madigou, V ^a   Rodriguez Clemente R ^a   Figueras, A ^a  

^a INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001170796     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(94)00645-8     Document Type: Article

References (5)