First structural characterization of a zinc-bis(dialkylamide) compound: Zn{N[C(CH3)2(CH2)3C(CH2 3)2]}2

Polyhedron

Volumn 17, Issue 5-6, 1998, Pages 1001-1004

  Rees Jr , William S ^a   Just, Oliver ^a   Schumann, Herbert ^b   Weimann, Roman ^b  

^a Georgia Institute of Technology   (United States)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Di(alkyl)amide composition; Zn N interaction

Indexed keywords

EID: 0001161058     PISSN: 02775387     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0277-5387(97)00328-8     Document Type: Article

References (32)

1. Nakanishi, K., Suemune, I., Fujii, Y., Kuroda, Y. and Yamanishi, M., Appl. Phys. Lett., 1991, 59, 1401.
2. Zmudzinski, C. A., Guan, Y. and Zory, P. S., IEEE Photon. Technol. Lett., 1990, 2, 94.
3. Haase, M. A., Qiv, J., DePuydt, J. M. and Cheng, H., Appl. Phys. Lett., 1991, 59, 1272.
4. Qiv, J., DePuydt, J. M., Cheng, H. and Haase, M. A., Appl. Phys. Lett., 1991, 59, 1992.
5. Haase, M. A., Cheng, H., Misemer, D. K., Strand, T. A. and DePuydt, J. M., Appl. Phys. Lett., 1991, 59, 3619.
6. Jeon, H., Ding, J., Patterson, W., Nurmikiko, A. V., Xie, W., Grilla, D. C., Kobayashi, M. and Gunshor, R. L., Appl. Phys. Lett., 1991, 59, 3619.
7. Menner, R., DimmLer, B., Mauch, R. H. and Schock, H. W., J. Crystal Growth, 1988, 86, 906.
8. Katayama, H., Oda, S. and Kukimoto, H., Appl. Phys. Lett., 1975, 27, 697.
9. Rohde, H. J., Thin Solid Films, 1983, 110, L125.
10. Okuyama, H., Miyajima, T., Morinaga, Y., Hiei, F., Ozawa, M. and Akimoto, K., Electron. Lett., 1992, 28, 3619.
11. Wright, P. J., Cockayne, B., Catell, A. F., Dean, P. J., Pitt, A. D. and Blackmore, G. W., J. Crystal Growth, 1982, 59, 155.
12. Stutius, W., J. Crystal Growth, 1982, 59, 1.
13. Stutius, W., J. Appl. Phys., 1982, 53, 284.
14. Stutius, W., Appl. Phys. Lett., 1982, 40, 246.
15. Catell, A. F., Cockayne, B., Dexter, K., Kirton, J. and Wright, P. J., IEEE Trans. Electron Devices ED, 1983, 30, 471.
16. Rees, Jr, W. S., Green, D. M., Anderson, T. J., Bretschneider, E., Pathangey, B. and Kim, J., J. Electronic Materials, 1992, 21, 361.
17. a. Rees, Jr, W. S., Anderson, T. J., Green, D. M. and Bretschneider, E., In Wide Band Gap Semiconductors, ed. T. D. Moutakas, J. I. Pankove and Y. Hamakawa, Mat. Res. Soc. Symp. Proc., 1992, 242, 281.
18. b. Rees, Jr, W. S., Green, D. M., Hesse, W., Anderson, T. J. and Pathangey, B., In Chemical Perspectives of Microelectronic Materials III, ed. C. R. Abernathy et al., Mat. Res. Soc. Symp. Proc., 1993, 282, 63.
19. c. Rees, Jr, W. S. and Just, O., In Gas-Phase and Surface Chemistry in Electronic Materials Processing, ed. T. J. Mountziavis, G. R. Paz-Pujatl, F. T. J. Smith and P. R. Westmoreland, Mat. Res. Soc. Symp. Proc., 1994, 334, 219.
20. d. Gaul, D. A., Rees, Jr, W. S. and Just, O., In Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II, ed. S. B. Desu, D. B. Beach and P. C. Van Buskirk, Mat. Res. Soc. Symp. Proc., 1996, 415, 117.
21. Bürger, H., Sawodny, W. and Wannagat, U., J. Organomet. Chem., 1965, 3, 113.
22. Bell, N. A., Shearer, H. M. M. and Spencer, C. B., Acta Cryst., 1983, C39, 1182.
23. Bradley, D. C., Inorg. Macromol. Rev., 1970, 1, 141.
24. 1: C, 62.50; H, 10.49; Zn. 18.90. Found: C, 62.25; H, 10.61; Zn, 19.10.
25. -3.
26. Power, P. P., Ruhlandt-Senge, K. and Shoner, S. C., Inorg. Chem., 1991, 30, 5013.
27. Haaland, A., Hedberg, K. and Power, P. P., Inorg. Chem., 1984, 23, 1972.
28. a. Rees, Jr, W. S., Green, D. M. and Hesse, W., Polyhedron, 1992, 11, 1667.
29. b. One can also replace, in selected examples, the trimethylsilyl group with a dimethylsilyl group, see: Rees, Jr, W. S., Just, O., Schumann, H. and Weimann, R., Angew. Chem. Int. Ed. Engl., 1996, 35, 419.
30. Bradley, D. C., Ghotra, J. S. and Hart. F. A., J. Chem. Soc., Chem. Commun., 1972, 349.
31. a. Chorley, R. W., Hitchcock, P. B., Lappert, M. F., Leung, W. P., Power, P. P. and Olmstead, M. M., Inorg. Chim. Acta, 1992, 198/200, 203.
32. b. Linti, G., Frey, F. and Polborn, K., Chem. Ber., 1994, 127, 1387.