Bubble-free wafer bonding of GaAs and InP on silicon in a microcleanroom

Japanese Journal of Applied Physics

Volumn 28, Issue 12 A, 1989, Pages L2141-L2143

  Lehmann, V ^a   Mitani, K ^a,b   Stengl, R ^a,c   Mii, T ^a   Gosele U ^a  

^a DUKE UNIVERSITY   (United States)

^b SHIN ETSU CHEMICAL CO LTD   (Japan)

^c SIEMENS AG   (Germany)

Author keywords

GaAs and InP on silicon; Inter face energy; Microcleanroom; Semiconductor on insulator (SOI); Wafer bonding

Indexed keywords

EID: 0001159302     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.28.L2141     Document Type: Article

References (10)

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