Electronic states in diffused quantum wells

Journal of Applied Physics

Volumn 82, Issue 8, 1997, Pages 3853-3856

  Vlaev, S ^a,b   Contreras Solorio, D A ^a  

^a UNIVERSIDAD AUTÓNOMA DE ZACATECAS   (Mexico)

^b INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001159057     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365750     Document Type: Article

References (20)

1. H. Peyre, J. Camassel, W. P. Gillin, K. P. Homewood, and R. Grey, Mater. Sci. Eng. B 28, 332 (1994).
2. P. J. Hughes, E. H. Li, and B. L. Weiss, J. Vac. Sci. Technol. B 13, 2276 (1995).
3. E. H. Li, K. S. Chan, B. L. Weiss, and J. Micallef, Appl. Phys. Lett. 63, 533 (1993).
4. R. K. Kupka and Y. Chen, J. Appl. Phys. 77, 1990 (1995).
5. J. N. Schulman, J. Vac. Sci. Technol. B 1, 644 (1983); J. N. Schulman and Y. Chang, Phys. Rev. B 31, 2056 (1985).
6. J. N. Schulman, J. Vac. Sci. Technol. B 1, 644 (1983); J. N. Schulman and Y. Chang, Phys. Rev. B 31, 2056 (1985).
7. H. Rodríguez-Coppola, J. L. Martínez-Cuellar, and R. Pérex-Álvarez, Phys. Status Solidi B 158, 481 (1990).
8. I. Harrison, Semicond. Sci. Technol. 9, 2053 (1994).
9. W. P. Gillin, D. J. Dunstan, K. P. Homewood, L. K. Howard, and B. J. Sealy, J. Appl. Phys. 73, 3782 (1993).
10. S. Panda, B. K. Panda, S. Fung, and C. D. Beling, J. Appl. Phys. 80, 1532 (1996).
11. Y. T. Oh and T. W. Kang, J. Appl. Phys. 78, 3376 (1995).
12. A. T. Meney, J. Appl. Phys. 72, 5279 (1992).
13. S. Vlaev, V. R. Velasco, and F. García-Moliner, Phys. Rev. B 49, 11222 (1994); ibid. 50, 4577 (1994); ibid. 51, 7321 (1995); ibid. 52, 13784 (1995).
14. S. Vlaev, V. R. Velasco, and F. García-Moliner, Phys. Rev. B 49, 11222 (1994); ibid. 50, 4577 (1994); ibid. 51, 7321 (1995); ibid. 52, 13784 (1995).
15. S. Vlaev, V. R. Velasco, and F. García-Moliner, Phys. Rev. B 49, 11222 (1994); ibid. 50, 4577 (1994); ibid. 51, 7321 (1995); ibid. 52, 13784 (1995).
16. S. Vlaev, V. R. Velasco, and F. García-Moliner, Phys. Rev. B 49, 11222 (1994); ibid. 50, 4577 (1994); ibid. 51, 7321 (1995); ibid. 52, 13784 (1995).
17. S. Vlaev, in Fabrication, Properties and Applications of Low-Dimensional Semiconductors, edited by M. Balkanski and I. Yanchev (Kluwer, Dordrecht, 1995) p.141.
18. J. Arriaga, M. C. Muñoz, V. R. Velasco, and F. García-Moliner, Phys. Rev. B 43, 9626 (1991).
19. V. Donchev, I. Ivanov, and K. Germanova, in Devices Based on Low-Dimensional Semiconductor Structures, edited by M. Balkanski (Kluwer, Dordrecht, 1996), p. 175; V. Donchev, I. Ivanov, and K. Germanova, in Heterostructure Epitaxy and Devices, edited by J. Novak and Schlachetzki (Kluwer, Dordrecht, 1996), p.83.
20. V. Donchev, I. Ivanov, and K. Germanova, in Devices Based on Low-Dimensional Semiconductor Structures, edited by M. Balkanski (Kluwer, Dordrecht, 1996), p. 175; V. Donchev, I. Ivanov, and K. Germanova, in Heterostructure Epitaxy and Devices, edited by J. Novak and Schlachetzki (Kluwer, Dordrecht, 1996), p.83.