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Volumn 18, Issue 4, 1999, Pages 501-512

Equivalent model of monocrystalline, polycrystalline and amorphous silicon solar cells

Author keywords

Dark current voltage characteristics; Equivalent model; Solar cells

Indexed keywords


EID: 0001153665     PISSN: 09601481     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0960-1481(98)00813-1     Document Type: Article
Times cited : (79)

References (9)
  • 2
    • 0018877130 scopus 로고
    • Theory of the electrical and photovoltaic properties of polycrystalline silicon
    • Ghosh A.K., Fishman C., Feng T. Theory of the electrical and photovoltaic properties of polycrystalline silicon. J. Appl. Phys. 51:(1):1980;446-454.
    • (1980) J. Appl. Phys. , vol.51 , Issue.1 , pp. 446-454
    • Ghosh, A.K.1    Fishman, C.2    Feng, T.3
  • 6
    • 0029391717 scopus 로고
    • Recombination rate saturation mechanisms at oxidized surfaces of high-efficiency silicon solar cells
    • Robinson S.J., Wenham S.R., Altermatt P.P., Aberle A.G., Heiser G. Recombination rate saturation mechanisms at oxidized surfaces of high-efficiency silicon solar cells. J. Appl. Phys. 78:(7):1995;4740-4754.
    • (1995) J. Appl. Phys. , vol.78 , Issue.7 , pp. 4740-4754
    • Robinson, S.J.1    Wenham, S.R.2    Altermatt, P.P.3    Aberle, A.G.4    Heiser, G.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.