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Volumn 50, Issue 12, 1994, Pages 8389-8401

Tetrahedral structures and phase transitions in III-V semiconductors

Author keywords

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Indexed keywords


EID: 0001153073     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.50.8389     Document Type: Article
Times cited : (46)

References (45)
  • 3
    • 84927333182 scopus 로고    scopus 로고
    • There have been recent experimental developments using combined Laue and single crystal x ray diffraction methods which have the potential to provide information regarding the relationship between structures involved in first order transitions. R.O. Piltz (unpublished).
  • 13
    • 33749404189 scopus 로고
    • and Phys. Rev. B 10, 1545 (1974).
    • (1974) Phys. Rev. B , vol.10 , pp. 1545
  • 14
    • 84927333181 scopus 로고    scopus 로고
    • R.W.G. Wyckoff, Crystal Structures, 2nd ed. (Interscience, New York, 1963), p. 121.
  • 18
    • 84927333180 scopus 로고    scopus 로고
    • At 10 GPa, a small rhombohedral distortion (α = 92°) is observed. The difference in intensity of the powder diffraction peaks with respect to those of the undistorted structure suggests that the atoms have moved slightly from their symmetry positions. The crystallographic details of this phase will be discussed more fully in a future publication.
  • 21
    • 84927333179 scopus 로고    scopus 로고
    • In the second of these papers, irreversibility of the InP photoluminescence signal was reported, but the cause could not be unambiguously attributed to the formation of a distinct crystalline phase upon pressure release. Hysteresis effects and/or scatter from phase transition induced defects would also be consistent with their observations.
  • 40
    • 84927333046 scopus 로고    scopus 로고
    • The Imma structure is a known high pressure phase of Si which is closely related to that of the β Sn structure.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.