Organometallic molecular precursors for low‐temperature MOCVD of III–V semiconductors

Advanced Materials

Volumn 3, Issue 11, 1991, Pages 542-548

  Maury, Francis ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001141478     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.19910031104     Document Type: Article

References (73)

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2. Metal organic chemical vapor deposition (MOCVD) perspectives and prospects
3. The Use of Metalorganics in the Preparation of Semiconductor Materials
4. Mass spectrometric study of the pyrolysis of organometallic precursors usable in GaAs vapor phase epitaxy
5. Quantitative evaluation and prediction of donor-acceptor interactions
6. An Examination of the Product Catalyzed Reaction of Trimethylgallium with Phosphine and the Mechanism of the Chemical Vapor Deposition of Gallium Phosphide and Gallium Arsenide
7. Transformation of Organometallies s into Common and Exotic Materials: Design and Activation
8. Growth of GaN Thin-Films from Triethylgallium Monamine
9. Gallium Diethyl Chloride: A New Substance in the Preparation of Epitaxial Gallium Arsenide
10. OMVPE of Gallium Arsenide Using an Adduct Compound
11. Organometallic Vapour Phase Epitaxy of Galliumnitride Using Ga(CH3)3 · N(CH3)3-Adduct Pyrolysis
12. Growth of ultrapure and Si-doped InP by low pressure metalorganic chemical vapor deposition