Detection of inactive defects in crystalline silicon by high-resolution transmission-electron energy-loss spectroscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 16, 1998, Pages 10338-10342

  Kohno, H ^a   Mabuchi, T ^a   Takeda, S ^a   Kohyama, M ^b  

^a OSAKA UNIVERSITY   (Japan)

^b OSAKA NATIONAL RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001122604     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.10338     Document Type: Article

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