Electrical Properties of Conductive In2S3 and In2O3 Films Prepared from the In(S2COC3H7-iso)3 Volatile Precursor

Inorganic Materials

Volumn 32, Issue 6, 1996, Pages 592-596

  Bessergenev, V G ^a   Ivanova, E N ^a   Kovalevskaya, Yu A ^a   Gromilov, S A ^a   Kirichenko, V N ^a   Larionov, S V ^a  

^a NIKOLAEV INSTITUTE OF INORGANIC CHEMISTRY   (Russian Federation)

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[No Author keywords available]

Indexed keywords

EID: 0001100291     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. Belyi, V.I., Rastorguev, A.A., Ivanova, E.N., Larionov, S.V., Kirichenko, V.N., Bessergenev, V.G., and Kovalevskaya, Yu.A., RF Inventor's Certificate no. 92-000601/26 (046 506).
2. Nomura, R., Konishi, K., and Matsuda, H., Sulphur-Doped Indium Oxide Thin Films as a New Transparent and Conductive Layer Prepared by OMCVD Process Using Butylindium Thiolate, J. Electrochem. Soc., 1992, vol. 138, p. 631.
3. Kosareva, L.A. and Larionov, S.V. Thermal Properties of Zinc(II), Cadmium(II), and Indium(III) Alkylxanthates, Izv. Sib. Otd. Akad. Nauk SSSR, Ser. Khim. Nauk, 1988, no. 3, p. 46.
4. 3, a New Modification of Indium Sesquisulphide, J. Cryst. Growth, 1973, vol. 20, p. 38.
5. Svechnikov, S.V., Sidenko, T.S., Chernova, A.S., and Zharovskii, L.F., Optical Properties of Indium Gallium Sulfide Films, Ukr. Fiz. Zh. (Russ. Ed.), 1982, vol. 27, no. 2, p. 285.
6. Powder Diffraction File, McClune, W.F., Ed., Swarthmore: Joint Committee on Powder Diffraction Standards, 1983.
7. 3, J. Phys. Chem. Solids, 1965, vol. 26, p. 1309.
8. Maruyama, T. and Fukui, K., Fluorine-Doped Indium Oxide Thin Films Prepared by Chemical Vapor Deposition, Jpn. J. Appl. Phys., 1990, vol. 29, no. 9, p. L1705.
9. 3 Structures, Neorg. Mater., 1994, vol. 30, no. 11, pp. 1363-1365.
10. Chernova, A.S., Buzaneva, E.V., and Rodionova, T.V., Initial Stages of the Growth of Indium Sulfide Films, Ukr. Fiz. Zh. (Russ. Ed.), 1981, vol. 26, no. 10, p. 1670.