-
1
-
-
84926870155
-
-
J. H. van der Merwe and C. A. Ball, in Epitaxial Growth, edited by J. W. Matthews (Academic, New York, 1975), Pt. b, pp. 493-528.
-
-
-
-
14
-
-
84910817242
-
-
edited by, R. Hull, J. M. Gibson, D. A. Smith, MRS Symposia Proceedings No. 94, Materials Research Society, Pittsburgh, This excludes the wetting monolayers, which results from overlayer-substrate chemical interactions.
-
(1987)
Initial Stages of Epitaxial Growth
, pp. 15
-
-
Grabow, M.H.1
Gilmer, G.H.2
-
16
-
-
84927272361
-
Thin epitaxial Ge−Si(111) films: Study and control of morphology
-
The potential for strain relaxation through coherent island formation and the role played by surface diffusion in affecting the film morphology during the initial stages of strained-layer epitaxy were previously mentioned by, J. F. van der Veen and
-
(1987)
Surface Science
, vol.191
, pp. 305
-
-
Maree, P.M.J.1
Nakagawa, K.2
Mulders, F.M.3
Kavanagh, K.L.4
-
20
-
-
84926870154
-
-
We have also found that through surface tension changes, island formation may be suppressed even at high growth temperatures (T apeq2 520 degrC); C. W. Snyder, H. Munekata, and B. G. Orr, Appl. Phys. Lett. (to be published).
-
-
-
-
21
-
-
84926870153
-
-
The strain relaxation in a 2D coherent island has been previously calculated;
-
-
-
-
24
-
-
84926848333
-
-
Without a loss of generality for a material such as InGa1-xx As on GaAs, beyond the few-monolayer wetting layer, the substrate-vapor interface free energy γSV may be set equal to the film-vapor interface energy γFV and the film-substrate interface energy may be set equal to zero. In addition, the surface energy is expressed relative to the uniform film, which is set to zero.
-
-
-
-
25
-
-
84926870152
-
-
Comparison of the analytical predictions with experiment at fixed misfit and varying temperature is difficult because the onset for island formation is not abrupt beyond a small range of temperature extending from the congruent sublimation temperature of InGa1-xx As (T app 530 degrC) to a few tens of degrees below. Thus, tc is not well defined over a reasonable temperature range. Nevertheless, there is qualitative agreement in the high- and low-temperature regimes. Note also, an evaluation of Tmin for quantitative comparison with experiment is problematic, as diffusion parameters are not accurately known.
-
-
-
-
26
-
-
84926870151
-
-
It is difficult to test for the conditions under which tc-> 0 because experimentally we are limited to temperatures less than the congruent sublimation temperature and laboratory time scales.
-
-
-
|
