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Volumn 10, Issue 12, 1996, Pages 567-571

Synthesis of high quality crystalline C-N films on silicon

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Indexed keywords


EID: 0001078231     PISSN: 02179849     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217984996000626     Document Type: Article
Times cited : (21)

References (18)
  • 8
    • 85033052742 scopus 로고    scopus 로고
    • "Hard carbon nitrogen and method for preparing sane", May 5, 1992, U.S. Patent 5, 110, 679
    • E. E. Haller, M. L. Cohen, and W. L. Hansers, "Hard carbon nitrogen and method for preparing sane", May 5, 1992, U.S. Patent 5, 110, 679.
    • Haller, E.E.1    Cohen, M.L.2    Hansers, W.L.3
  • 15
    • 85033058557 scopus 로고    scopus 로고
    • note
    • 4 transitional layers may be formed at interface, which lead to the increase of the N:C ratio in AES analysis. More detailed Raman, AES, and TEM results will be given in a following paper.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.