메뉴 건너뛰기




Volumn 59, Issue 2, 1999, Pages 750-761

Pressure-induced phase transitions in agcl, agbr, and agi

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001061625     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.750     Document Type: Article
Times cited : (165)

References (67)
  • 18
    • 0007090577 scopus 로고    scopus 로고
    • For a discussion of the high-pressure structural behavior of the III-V and II-VI semiconductors, including the (non)existence of site-(ordered)/disordered β-Sn-structured phases, see, and
    • For a discussion of the high-pressure structural behavior of the III-V and II-VI semiconductors, including the (non)existence of site-(ordered)/disordered β-Sn-structured phases, see R J. Nelmes and M I. McMahon, Semicond. Semimet.54, 145 (1998).
    • (1998) Semicond. Semimet. , vol.54 , pp. 145
    • Nelmes, R.J.1    McMahon, M.I.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.