SCOPUS 정보 검색 플랫폼

Volumn 60, Issue 9, 1988, Pages 828-831

Observation of ballistic holes

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001054302 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.60.828 Document Type: Article

Times cited : (22)

References (16)

1
- 33745583732
- R. J. von Gutfeld and
- (1967) Phys. Rev. Lett. , vol.18 , pp. 855
- Nethercot, A.H.¹

6
- 0020193772
- Semiconducting and other major properties of gallium arsenide
- (1982) Journal of Applied Physics , vol.53 , pp. R123
- Blakemore, J.C.¹

9
- 36549100083
- (1985) J. Appl. Phys. , vol.57 , pp. 1816
- Miller, D.L.¹ Asbeck, P.M.²

10
- 84927810638
- We may assume that some ballistic holes, few as they may be, always exist in the structure. We later prove their existence and find their number from spectroscopy measurements.

11
- 5544221397
- (1986) J. Appl. Phys. , vol.59 , pp. 200
- Batey, J.¹ Wright, S.L.²

12
- 84927810637
- The valence-band discontinuity Δ EV= 5.5 x, where x is the AlAs mole percentage. For our AlGaAs collector barrier, x = 31 % and Δ EV= 171 meV.

13
- 84927810636
- Capacitance measurements done on separate p+ndashintrinsic AlGaAsndash p- structures show a voltage shift in the flat-band condition consistent with positive charges in the barrier in the low 1016-cm-3 range.

14
- 0001468271
- Similar low-energy electron distributions had been reported by
- (1985) Phys. Rev. Lett. , vol.55 , pp. 2071
- Levi, A.F.J.¹ Hayes, J.R.² Platzman, P.M.³ Wiegmann, W.⁴

16
- 0023403856
- For 31-nm base thickness, light- and heavy-band mixing at k vec = 0 is insignificant. See, for example
- (1987) Semicond. Sci. Technol. , vol.2 , pp. l607
- Brand, S.¹ Hughes, D.T.²

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