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Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 3, 1996, Pages 1775-1784

Nonequilibrium hole relaxation dynamics in an intrinsic semiconductor

(3) Langot, P a Tommasi, R a Vallee F a

a ECOLE POLYTECHNIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001006085 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.54.1775 Document Type: Article

Times cited : (48)

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