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11
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-
0019068472
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-
Due to the presence of charge of the reference electrons which surround an electron of finite charge, any displacement or polarization of the charges in the solid surface surrounding the electron causes a force on the electron itself. The treatment of Von Roos differs from the present one in that the former neglects this force, and consequently asserts that the conduction-band edge at the heterointerface is continuous.
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(1980)
Solid-State Electron
, vol.23
, pp. 1069
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-
Van Roos, O.1
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17
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0020169641
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-
The importance of the electrostatic potential demonstrated by Lundstrom’s investigations points to the basic difficulties that prompted Adam and Nussbaum to propose their band lineup theory (see Ref. 9).
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(1982)
Solid-State Electron
, vol.25
, pp. 683
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-
Lundstrom, M.S.1
Schuelke, R.J.2
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26
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0004093089
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-
(Pergamon, Oxford, 1962), pp. 351–353. While the table of Blakemore for Fermi-Dirac integrals include numerical values of Fermi-Dirac integrals up to [formula omitted] the corresponding table of Beer and co-workers [A. C. Beer, M. N. Chase, P. N. Choquard, Helv. Phys. Acta, 28, 529, 1955] includes numerical values of the same quantities up to [formula omitted] Blakemore’s value for a Fermi-Dirac integral of order [formula omitted] which is used in the present calculations is, however, 1.128379 times greater than the value of the same quantity given by Beer et al.).
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Semiconductor Statistics
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Blakemore, J.S.1
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27
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84950844557
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-
Here, and in the remainder of the text, all the sums go over the summing index μ or ν with lower limit equal to 0 and the upper limit equal to 8.
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-
-
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37
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4243574039
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-
At least a part of the band-gap narrowing problem lies in the way the values of the band-gap narrowing are extracted from I-V measurements. Band-gap narrowing data obtained from electrical measurements (see Refs. 25–32) may not, therefore, correspond to true band-gap narrowing of semiconductors. Some corrections need to be added to these values of band-gap narrowing in order to make them correspond to reductions of the true energy gap. See for a discussion of this
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(1982)
Phys. Rev. Lett
, vol.49
, pp. 586
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-
Selloni, A.1
Pentelides, S.T.2
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59
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-
84950842028
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-
The criterion Eq. (44) is not very strictly valid. Many practical applications refer to the regime of moderate densities where [formula omitted]
-
-
-
-
63
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-
84919032582
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-
For the calculation of [formula omitted] the band-gap narrowing parameters [formula omitted] obtained from the fitting of experimental curve of Zverev et al. (see Ref. 37) of H-type GaAs have been used. As can be seen from a review article of Abram and co-workers, the variations of band-gap narrowings with doping concentrations of p-type and n-type GaAs are almost identical. Hence, our least-square fitting data for n-type GaAs are the same as those for p-type GaAs. A has been chosen to be 1 for the calculations.
-
(1978)
Adv. Phys
, vol.27
, pp. 799
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-
Abram, R.A.1
Rees, G.J.2
Wilson, B.L.H.3
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