General comparison of the surface processes involved in nitridation of Si(100)-2×1 by NH3 and in SiNx film deposition: A photoemission study

Physical Review B

Volumn 38, Issue 18, 1988, Pages 13113-13123

  Kubler, L ^a   Bischoff, J L ^a   Bolmont, D ^a  

^a UNIVERSITÉ DE HAUTE ALSACE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000997771     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.38.13113     Document Type: Article

References (33)

1. Kinetics of Si(100) nitridation first stages by ammonia: Electron- beam-induced thin film growth at room temperature
2. Nitrogen bonding changes versus substrate temperature evidenced by X.P.S. in SiNxHy alloys prepared with NH3
3. Composition and electron stress effects in silicon nitride thin films made by thermal growth and chemical etching of LPCVD MNOS structures as studied by x-ray photoelectron spectroscopy (XPS)
4. Electron mean escape depths from x−ray photoelectron spectra of thermally oxidized silicon dioxide films on silicon
5. Low temperature nitridation and hydrogenation of Si films with NH : a photoemission study
6. The adsorption of PH3 on Si(100) and its effect on the coadsorption of SiH4
7. X-ray photoelectron spectroscopy observations of argon-ion bombardment effects on phase separated structures such as SiNx alloys or Si/Si3N4 interfaces
8. Nitridation of silicon (111): Auger and LEED results
9. Electronic structure of hydrogenated and unhydrogenated amorphousSiNx (0≤x≤1.6): A photoemission study
10. Thermal oxidation of silicon. The special case of the growth of very thin films