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Volumn 54, Issue 17, 1996, Pages 11853-11856
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Use of atomic-force microscopy and of a parallel irradiation geometry for in-depth characterization of damage produced by swift Kr ions in silicon
a a b |
Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0000993374
PISSN: 10980121
EISSN: 1550235X
Source Type: Journal
DOI: 10.1103/PhysRevB.54.11853 Document Type: Article |
Times cited : (23)
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References (12)
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